BSV80

BSV80

  • Description:JFET N-CH TO18
  • Series:-

SKU:b63493aee4c0 Category: Brand:

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Product Detailed Parameters

  • Description:JFET N-CH TO18
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Bulk
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):40 V
  • Current - Drain (Idss) @ Vds (Vgs=0):10 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:1 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds:5pF @ 10V
  • Resistance - RDS(On):60 Ohms
  • Power - Max:350 mW
  • Operating Temperature:-65°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-18
  • Grade:-
  • Qualification:-

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BSV80

Overview

The Central Semiconductor BSV80 is an N-channel silicon Junction Field Effect Transistor (JFET) designed for switching applications. It operates within a Drain-Source Voltage of 40 V and dissipates up to 350 mW. The device features a Gate Current rating of 50 mA and functions across a temperature range of -65°C to +175°C. Electrical characteristics include a maximum IDSS of 10 mA at VDS=15V, with a VGS(OFF) ranging from 1.0 V to 5.0 V. The component utilizes a TO-18 metal can package.

Feature Summary

  • Designed specifically for high-speed switching applications
  • Utilizes robust N-channel silicon technology
  • Capable of operating in extreme thermal environments

Applications

  • Electronic switching circuits
  • Signal processing systems
  • High-temperature industrial electronics

Procurement Notes

Verify current availability status as the BSV80 has been transitioned to End of Life (EOL) status by Central Semiconductor Corp. Confirm if stock-only units are available through authorized distributors or if alternative sourcing strategies are required. Contact engineering support for technical data regarding obsolete components.

Selection Notes

Select the BSV80 when designing circuits requiring N-channel JFETs with specific voltage ratings and thermal resilience. Ensure the application aligns with the 40 V drain-source limit and 350 mW power dissipation constraints. Consider the TO-18 package form factor for compatibility with existing through-hole layouts.

Part Context

The BSV80 belongs to the Central Semiconductor family of N-channel silicon JFETs, sharing design similarities with the BSV79 model. Both devices target switching applications but differ in specific electrical thresholds such as IDSS and VGS(OFF). This series represents discrete semiconductor solutions for specialized analog and digital circuit requirements.

Replacement Considerations

No direct replacement part numbers are officially listed for the BSV80. The manufacturer indicates that only stock-only options exist for this discontinued item. Engineers should consult Central Semiconductor's engineering team for potential alternate sources or custom screening services.

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