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Product Detailed Parameters
- Description：MOSFET N-CH 25V 32A/40A TSDSON
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：32A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 4.5 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：3900 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-34
- Package / Case：8-PowerVDFN
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Overview
The BSZ010NE2LS5 is an OptiMOS™ 5 N-channel power transistor with a 25 V drain-source voltage rating. It features a maximum on-resistance of 1 mΩ at VGS=4.5 V and supports a continuous drain current of 212 A at TC=25°C. The device includes 100% avalanche testing and offers superior thermal resistance in a PG-TSDSON-8 FL package. Key dynamic parameters include a total gate charge of 21 nC (0V to 4.5 V) and an output charge of 30 nC, optimized for high-performance buck converter applications.
Feature Summary
- Optimized for high-performance buck converters
- Very low on-resistance at VGS=4.5 V
- 100% avalanche tested
- Superior thermal resistance
Applications
- High-performance buck converters
Procurement Notes
Verify the specific ordering code BSZ010NE2LS5 against the manufacturer's official datasheet revision 2.2 or later. Confirm that the PG-TSDSON-8 FL package marking matches '10NE2L5'. Ensure compliance with JEDEC qualification standards for industrial applications as specified in the product validation section. Check for RoHS and halogen-free compliance requirements relevant to your manufacturing process.
Selection Notes
Select this component when designing circuits requiring low conduction losses at 4.5 V gate drive levels. The 25 V rating provides headroom for standard 12 V systems. Consider the thermal resistance values for PCB layout planning, specifically the junction-to-case bottom resistance of 1.8 °C/W. Evaluate the pulsed drain current capability if transient loads exceed the continuous rating of 212 A.
Part Context
This part belongs to Infineon's OptiMOS™ 5 family of power transistors. It utilizes advanced trench technology to achieve low RDS(on) and fast switching speeds. The TSDSON-8 FL package allows for efficient heat dissipation through the exposed pad, suitable for space-constrained designs. It is fully qualified for industrial temperature ranges from -55°C to 150°C.
Replacement Considerations
No direct public substitute part numbers are listed in the provided datasheet. Verify compatibility by matching key electrical parameters: VDS ≥ 25 V, RDS(on) ≤ 1 mΩ @ 4.5 V, and ID ≥ 212 A. Ensure the replacement device supports the same PG-TSDSON-8 FL package and thermal characteristics.
