BSZ028N04LSATMA1

$1.01

Description：MOSFET N-CH 40V 21A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2739cdc29e1f Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 21A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：32 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2300 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 63W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-FL
Package / Case：8-PowerTDFN

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BSZ028N04LSATMA1

Overview

The BSZ028N04LS is an N-channel OptiMOS power MOSFET with a 40 V drain-source voltage rating. It features a maximum on-resistance of 2.8 mΩ at VGS=10 V and 3.8 mΩ at VGS=4.5 V, supporting a continuous drain current of 114 A at TC=25°C. The device utilizes a PG-TSDSON-8 FL package with thermal resistance RthJC of 1.2 K/W. Key dynamic parameters include a total gate charge of 32 nC (VGS=10 V) and 16 nC (VGS=4.5 V), output charge Qoss of 28 nC, and switching times of 4 ns for both rise and fall.

Feature Summary

Optimized for high-performance synchronous rectification in SMPS applications
Features enlarged source interconnection to ensure superior solder joint reliability
Qualified according to JEDEC standards for target automotive and industrial applications
Manufactured using Pb-free lead plating, RoHS compliant, and halogen-free materials

Applications

Synchronous rectification in high-performance switch-mode power supplies
Target applications qualified according to JEDEC standards
Powertrain systems requiring robust thermal performance

Procurement Notes

Verify the specific ordering code matches the required package variant. Confirm that the component meets all applicable JEDEC qualification requirements for the intended environment. Ensure compliance with RoHS and halogen-free specifications if mandated by the end-product design. Cross-reference datasheet revision history for any updates to thermal or electrical ratings prior to final procurement.

Selection Notes

Select this component when low on-resistance at logic-level gate voltages is critical for efficiency. The TSDSON-8 FL package provides enhanced thermal dissipation compared to standard packages. Consider the avalanche energy rating of 100 mJ for circuits prone to inductive load switching. Evaluate the 1.2 K/W junction-to-case thermal resistance against the PCB copper area available for heat sinking.

Part Context

This part belongs to Infineon's OptiMOS family, specifically designed for differentiated power MOSFET applications. It succeeds previous generations by offering improved thermal characteristics and lower on-resistance within the same footprint. The technology focuses on reducing conduction losses while maintaining high reliability in compact electronic designs.