BSZ0500NSIATMA1

BSZ0500NSIATMA1

$1.12
  • Description:MOSFET N-CH 30V 30A/40A TSDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:fba6ceacc85b Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 30V 30A/40A TSDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:30A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:1.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3400 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):2.1W (Ta), 69W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TSDSON-8-FL
  • Package / Case:8-PowerTDFN

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BSZ0500NSIATMA1

Overview

BSZ0500NSIATMA1 is an N-channel power MOSFET from Infineon Technologies, part of the OptiMOS 5 family. It features a 30 V drain-source voltage rating and operates with a logic-level gate threshold. The device utilizes a TSDSON-8 surface-mount package. Key electrical parameters include a maximum continuous drain current of 123 A at 25°C and a typical on-resistance of 2.1 mΩ at 10 V gate drive. It supports a junction temperature range from -55°C to +150°C.

Feature Summary

  • Logic level operation for direct interface with standard digital control signals
  • Monolithically integrated Schottky-like diode for improved switching performance
  • Optimized low on-resistance for high efficiency in power conversion applications

Applications

  • DC-DC converter modules
  • Motor control circuits
  • Power distribution systems

Procurement Notes

Verify the complete ordering code including suffixes against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and material content declarations via the supplier's data sheet before finalizing procurement orders.

Selection Notes

Select this component when a compact SMD solution is required for 30 V applications. Evaluate thermal resistance values relative to the PCB copper area to ensure adequate heat dissipation. Compare gate charge requirements against driver capabilities to optimize switching speed and minimize losses.

Part Context

This component belongs to the OptiMOS 5 product line, which represents advanced silicon technology for low-voltage power switching. The series focuses on reducing conduction losses while maintaining robust avalanche characteristics suitable for industrial and automotive environments.

Replacement Considerations

Cross-reference with BSZ0501NSIATMA1 or BSC0500NSIATMA1 for alternative pinouts or slightly different electrical ratings within the same package family.

BSZ0500NSIATMA1BSZ0500NSIATMA1
$1.12
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