SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
BSZ0500NSIATMA1 is an N-channel power MOSFET from Infineon Technologies, part of the OptiMOS 5 family. It features a 30 V drain-source voltage rating and operates with a logic-level gate threshold. The device utilizes a TSDSON-8 surface-mount package. Key electrical parameters include a maximum continuous drain current of 123 A at 25°C and a typical on-resistance of 2.1 mΩ at 10 V gate drive. It supports a junction temperature range from -55°C to +150°C.
Verify the complete ordering code including suffixes against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and material content declarations via the supplier's data sheet before finalizing procurement orders.
Select this component when a compact SMD solution is required for 30 V applications. Evaluate thermal resistance values relative to the PCB copper area to ensure adequate heat dissipation. Compare gate charge requirements against driver capabilities to optimize switching speed and minimize losses.
This component belongs to the OptiMOS 5 product line, which represents advanced silicon technology for low-voltage power switching. The series focuses on reducing conduction losses while maintaining robust avalanche characteristics suitable for industrial and automotive environments.
Cross-reference with BSZ0501NSIATMA1 or BSC0500NSIATMA1 for alternative pinouts or slightly different electrical ratings within the same package family.