BSZ0501NSIATMA1

$1.33

Description：MOSFET N-CH 30V 25A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5f5e02f2098e Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 25A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：25A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-FL
Package / Case：8-PowerTDFN

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BSZ0501NSIATMA1

Overview

The BSZ0501NSIATMA1 is an N-channel OptiMOS™ 5 Power-MOSFET with a 30 V drain-source voltage rating. It features a maximum on-resistance of 2.0 mΩ at VGS=4.5 V and supports a continuous drain current of 123 A at TC=25°C. The device includes a monolithic integrated Schottky-like diode and is qualified according to JEDEC standards. Key dynamic parameters include a total gate charge of 11.4 nC (VGS=4.5 V) and 24 nC (VGS=10 V), with output charge QOSS of 18 nC. Thermal resistance from junction to case is 2.5 K/W, and the operating temperature range spans -55°C to 150°C.

Feature Summary

Optimized for high-performance buck converters
Monolithically integrated Schottky-like diode
Very low on-resistance at logic-level gate drive voltages
100% avalanche tested for robustness

Applications

High-performance buck converters
Automotive power switching applications
General-purpose power management circuits

Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with PG-TSDSON-8 FL package dimensions during PCB layout. Confirm RoHS compliance and halogen-free status per IEC61249-2-21 requirements for your manufacturing process.

Selection Notes

Select this component when low RDS(on) at VGS=4.5 V is critical for efficiency in logic-level driven circuits. The integrated Schottky-like diode simplifies synchronous rectification designs. Consider the 123 A continuous current capability and 2.5 K/W thermal resistance for heat dissipation planning in compact SMD layouts.

Part Context

This part belongs to the OptiMOS™ 5 family, designed for automotive and industrial applications requiring high reliability. It utilizes trench technology to achieve low on-resistance and fast switching speeds within a compact PG-TSDSON-8 FL package. The series emphasizes robustness through 100% avalanche testing and JEDEC qualification.

Replacement Considerations

BSZ0501NSI is the direct equivalent bare die/package variant. Verify pinout and thermal pad configuration matches before substitution.

FAQ

Is the BSZ0501NSIATMA1 suitable for synchronous buck converter applications?

Yes, it is optimized for high-performance buck converters and features a monolithic integrated Schottky-like diode, which aids in synchronous rectification designs.