BSZ058N03LSGATMA1

$1.14

Description：MOSFET N-CH 30V 15A/40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f145b66f4047 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 15A/40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 45W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

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BSZ058N03LSGATMA1

Overview

The BSZ058N03LSGATMA1 is an N-channel enhancement-mode Power-MOSFET from the OptiMOS 3 series, rated for a maximum drain-source voltage of 30 V. It features a PG-TSDSON-8 surface-mount package with eight pins. Key electrical parameters include a maximum on-resistance (RDS(on)) of 7.1 mΩ at VGS=4.5 V and 20 A, and a continuous drain current (ID) of 71 A at TC=25 °C. The device supports a pulsed drain current of 284 A and operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

Optimized technology specifically designed for DC/DC converters and fast-switching applications in switch-mode power supplies.
Features excellent gate charge x RDS(on) figure of merit and very low on-resistance for high efficiency.
Superior thermal resistance characteristics combined with avalanche rating capability.
Logic level operation suitable for direct drive by standard logic interfaces.

Applications

Switch-mode power supplies (SMPS)
DC/DC converters
Target applications qualified according to JEDEC standards

Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to confirm packaging details such as tape and reel specifications. Ensure that the component meets RoHS compliance and halogen-free requirements as stated in the datasheet. Confirm availability status directly with authorized distributors or the manufacturer, as supply conditions may vary.

Selection Notes

Select this component when a 30 V N-channel MOSFET with low on-resistance and high current handling is required. Consider the PG-TSDSON-8 package dimensions for PCB layout constraints. Evaluate the thermal performance based on the specified RthJC and RthJA values relative to the application's cooling environment and duty cycle requirements.

Part Context

This part belongs to the OptiMOS 3 family of power MOSFETs manufactured by Infineon Technologies. The series is characterized by advanced silicon technology aimed at improving efficiency in power conversion applications. The BSZ058N03LSG variant specifically targets low-voltage, high-current scenarios requiring robust switching performance.

FAQ

Is the BSZ058N03LSGATMA1 avalanche rated?

Yes, the datasheet explicitly states that the device is avalanche rated, with a single pulse avalanche energy (EAS) of up to 55 mJ under specified test conditions.