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The BSZ065N06LS5ATMA1 is an N-channel OptiMOS power transistor with a 60 V drain-source breakdown voltage. It features a maximum on-state resistance of 6.5 mΩ at VGS=10 V and supports a continuous drain current of 65 A at TC=25°C. The device utilizes a PG-TSDSON-8 FL package for efficient thermal management. Key dynamic parameters include a total gate charge of 10 nC and an output charge of 19 nC, optimized for high-performance synchronous rectification in switching mode power supplies.
Verify the component against official Infineon datasheet specifications to ensure authenticity. Confirm that the marking code matches '065N06L' and the package type is PG-TSDSON-8 FL. Ensure compliance with RoHS standards and halogen-free requirements as specified in the documentation before integration into designs.
Select this component for applications requiring low conduction losses and robust avalanche performance. The 60 V rating and 6.5 mΩ RDS(on) make it suitable for 48V or similar bus architectures. Consider the TSDSON-8 package for its compact footprint and thermal efficiency in space-constrained PCB layouts.
This part belongs to the OptiMOS family of power transistors from Infineon Technologies. It is designed to provide high efficiency and reliability in power conversion systems. The specific model BSZ065N06LS5 represents a 60V N-channel variant within this series, tailored for modern power supply designs.
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal characteristics.