BSZ065N06LS5ATMA1

BSZ065N06LS5ATMA1

$1.31
  • Description:MOSFET N-CH 60V 40A TSDSON
  • Series:OptiMOS™ 5
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:d74a896be2e6 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 40A TSDSON
  • Series:OptiMOS™ 5
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:6.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs:13 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):46W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TSDSON-8-FL
  • Package / Case:8-PowerTDFN

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BSZ065N06LS5ATMA1

Overview

The BSZ065N06LS5ATMA1 is an N-channel OptiMOS power transistor with a 60 V drain-source breakdown voltage. It features a maximum on-state resistance of 6.5 mΩ at VGS=10 V and supports a continuous drain current of 65 A at TC=25°C. The device utilizes a PG-TSDSON-8 FL package for efficient thermal management. Key dynamic parameters include a total gate charge of 10 nC and an output charge of 19 nC, optimized for high-performance synchronous rectification in switching mode power supplies.

Feature Summary

  • Optimized for high-performance synchronous rectification applications
  • Superior thermal resistance characteristics
  • 100% avalanche tested for enhanced reliability

Applications

  • Synchronous rectification in switching mode power supplies

Procurement Notes

Verify the component against official Infineon datasheet specifications to ensure authenticity. Confirm that the marking code matches '065N06L' and the package type is PG-TSDSON-8 FL. Ensure compliance with RoHS standards and halogen-free requirements as specified in the documentation before integration into designs.

Selection Notes

Select this component for applications requiring low conduction losses and robust avalanche performance. The 60 V rating and 6.5 mΩ RDS(on) make it suitable for 48V or similar bus architectures. Consider the TSDSON-8 package for its compact footprint and thermal efficiency in space-constrained PCB layouts.

Part Context

This part belongs to the OptiMOS family of power transistors from Infineon Technologies. It is designed to provide high efficiency and reliability in power conversion systems. The specific model BSZ065N06LS5 represents a 60V N-channel variant within this series, tailored for modern power supply designs.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal characteristics.

BSZ065N06LS5ATMA1BSZ065N06LS5ATMA1
$1.31
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