BSZ075N08NS5ATMA1

$0.75

Description：MOSFET N-CH 80V 40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9d833c00ad69 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.8V @ 36µA
Gate Charge (Qg) (Max) @ Vgs：29.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2080 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-26
Package / Case：8-PowerTDFN

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BSZ075N08NS5ATMA1

Overview

The BSZ075N08NS5ATMA1 is an N-channel OptiMOS™ 5 power transistor with a drain-source voltage of 80 V. It features a maximum on-resistance of 7.5 mΩ and supports a continuous drain current of 73 A at 25°C case temperature. The device utilizes a PG-TSDSON-8 FL (S3O8) package, offering a thermal resistance from junction to case of 1.8 K/W maximum. Key dynamic parameters include a total gate charge of 24 nTypical and an output charge of 29 nC.

Feature Summary

Optimized technology for DC/DC converters
Excellent figure of merit combining gate charge and on-resistance
Higher solder joint reliability due to enlarged source interconnection

Applications

High frequency switching applications
Synchronous rectification
DC/DC converters

Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to ensure correct packaging and marking configurations. Confirm RoHS compliance status and material content declarations prior to integration into final assemblies. Ensure procurement channels provide valid traceability data consistent with JEDEC qualification standards.

Selection Notes

Select this component for designs requiring low conduction losses in 80 V environments. Evaluate the thermal performance based on the specified junction-to-case resistance and PCB cooling area requirements. Consider the avalanche energy rating when designing circuits subject to inductive load switching or transient voltage spikes.

Part Context

This part belongs to the OptiMOS™ 5 family, representing advanced silicon MOSFET technology from Infineon Technologies. It is designed specifically for telecom and server applications where high power density and efficient switching are critical. The S3O8 package provides a compact footprint suitable for space-constrained printed circuit board layouts.