BSZ076N06NS3GATMA1

Description：MOSFET N-CH 60V 20A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d1f375f76fce Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 20A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4000 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerVDFN

Download product information

BSZ076N06NS3GATMA1

Overview

The BSZ076N06NS3 G is an N-channel OptiMOS™ 3 power transistor designed for high-frequency switching and synchronous rectification. It features a PG-TSDSON-8 package with a maximum drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 20 A at TC=25 °C. The device exhibits a maximum on-resistance (RDS(on)) of 7.6 mΩ at VGS=10 V and ID=20 A. Total gate charge (Qg) is typically 37 nC, with a maximum of 50 nC. Power dissipation reaches 69 W at TC=25 °C, supported by a thermal resistance junction-to-case (RthJC) of 1.8 K/W.

Feature Summary

Optimized technology specifically engineered for DC/DC converters to ensure excellent gate charge x RDS(on) figure of merit.
Features very low on-resistance and is ideal for high-frequency switching applications and synchronous rectification.
Includes an integrated body diode with fast reverse recovery characteristics suitable for demanding power conversion topologies.

Applications

High frequency switching circuits
Synchronous rectification
DC/DC converters

Procurement Notes

Verify the specific ordering suffix 'ATMA1' against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the PG-TSDSON-8 outline dimensions and marking code '076N06N'. Confirm RoHS compliance and halogen-free status according to IEC61249-2-21 standards prior to integration.

Selection Notes

Select this component when a low-profile surface-mount solution is required for 60 V applications. The PG-TSDSON-8 package offers a compact footprint while maintaining robust thermal performance through a low junction-to-case resistance. Consider the avalanche energy rating if inductive load switching is anticipated within the circuit design parameters.

Part Context

This part belongs to the OptiMOS™ 3 family from Infineon Technologies, utilizing silicon planar trench gate MOSFET technology. The series is characterized by optimized cell architecture for reduced conduction losses. The BSZ prefix indicates a specific product line variant within the broader portfolio of N-channel power transistors designed for efficiency-critical environments.