BSZ0901NSIATMA1

$1.46

Description：MOSFET N-CH 30V 25A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f7dcef3fcba1 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 25A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：25A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2600 pF @ 15 V
FET Feature：Schottky Diode (Body)
Power Dissipation (Max)：2.1W (Ta), 69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-FL
Package / Case：8-PowerTDFN

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BSZ0901NSIATMA1

Overview

The BSZ0901NSIATMA1 is an N-channel OptiMOS Power-MOSFET with a 30 V drain-source breakdown voltage. It features a PG-TSDSON-8 FL (S3O8) package and supports a continuous drain current of up to 142 A at 25 °C case temperature. The maximum on-resistance is 2.1 mΩ at VGS=4.5 V. Key dynamic parameters include a total gate charge of 41 nC (0V to 10V) and an output charge of 28 nC. The device operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

Optimized for high-performance buck converter applications as a synchronous FET
Features a monolithically integrated Schottky-like diode
Guaranteed 100% avalanche testing for enhanced ruggedness

Applications

High-performance buck converters
Automotive power management systems
Industrial DC-DC conversion circuits

Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm packaging details, such as reel specifications or tape-and-reel dimensions. Ensure that the component meets all relevant JEDEC qualification standards required for the target application environment before finalizing procurement.

Selection Notes

Select this component when low on-resistance at logic-level gate voltages is critical for efficiency. The integrated Schottky-like diode simplifies circuit design by eliminating the need for external body diodes in synchronous rectification topologies. Verify thermal requirements against the specified RthJC value.

Part Context

This part belongs to the OptiMOS family of power MOSFETs manufactured by Infineon Technologies. It utilizes silicon technology and is designed for robust performance in switching applications. The S3O8 package provides superior thermal resistance compared to standard surface-mount options.