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Product Detailed Parameters
- Description：MOSFET N-CH 34V 9A/36A 8TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：34 V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta), 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1310 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8
- Package / Case：8-PowerTDFN
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Overview
The BSZ0909NSATMA1 is a single N-channel Power MOSFET from Infineon Technologies, part of the OptiMOS family. It features a PG-TSDSON-8 surface-mount package with a drain-source voltage (Vds) of 34 V and a continuous drain current (Id) of 36 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 12 mΩ at 10 V gate drive. Key electrical parameters include a gate charge (Qg) of 17 nC at 10 V, a threshold voltage (Vgs(th)) of 2 V, and a power dissipation rating of 25 W at case temperature. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- OptiMOS technology provides low on-resistance for high efficiency in power switching applications.
- Integrated body diode supports synchronous rectification and inductive load switching.
- Enhancement-mode operation ensures reliable turn-on with standard logic-level gate drives.
Applications
- DC-DC converter output stages
- Synchronous rectification in power supplies
- Load switching circuits
Procurement Notes
Verify the complete ordering code including the ATMA1 suffix to ensure correct tape-and-reel packaging configuration. Confirm that the component status is active for new designs, as availability may vary by region. Cross-reference the specific datasheet revision to validate thermal and electrical characteristics against your design requirements before finalizing procurement.
Selection Notes
Select this component when a 34 V N-channel MOSFET with high current capability is required in a compact TSDSON-8 footprint. The 12 mΩ Rds(on) specification suits low-voltage, high-current applications where conduction losses must be minimized. Ensure the gate drive voltage aligns with the 10 V test conditions for optimal performance.
Part Context
This part belongs to the OptiMOS series of power MOSFETs designed for efficient power conversion. The BSZ0909NS variant specifically targets applications requiring robust performance in small surface-mount packages. It complements other low-voltage MOSFETs in the portfolio by offering a balance of current handling and low on-state resistance.
Replacement Considerations
Check for direct cross-references such as BSZ0909NS without the ATMA1 suffix for different packaging options. Verify compatibility with alternative 34 V, 36 A N-channel MOSFETs in TSDSON-8 packages if supply constraints exist, ensuring pinout and thermal characteristics match.
