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The BSZ0945NDXTMA1 is an N-channel Power MOSFET from Infineon Technologies, belonging to the OptiMOS 5 product family. It features a drain-source voltage (V_DSS) of 40 V and a continuous drain current (I_D) of 82 A at 25°C case temperature. The device exhibits a maximum on-state resistance (R_DS(on)) of 3.6 mΩ at a gate-source voltage of 10 V. It utilizes a PG-DSO-8 surface-mount package designed for high thermal efficiency and low inductance.
Verify the specific suffix XTMA1 to confirm tape-and-reel packaging configuration. Ensure the ordering part number matches the required PG-DSO-8 variant. Cross-reference with official Infineon documentation to validate RoHS compliance status and lead time availability before finalizing procurement plans.
Select this component when a 40 V rating and high current capacity are required for synchronous rectification. The low R_DS(on) minimizes conduction losses in high-current paths. Consider the PG-DSO-8 package for its thermal performance and footprint compatibility with standard PCB layouts.
This part belongs to the OptiMOS 5 family, which represents Infineon's fifth-generation trench MOSFET technology. These devices are engineered for automotive and industrial power management applications, offering superior efficiency compared to previous generations through reduced charge requirements and lower on-resistance.
Consult official Infineon substitution guides for compatible alternatives within the OptiMOS series. Verify pinout compatibility and thermal characteristics before replacing with other PG-DSO-8 packages.