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Product Detailed Parameters
- Description：MOSFET N-CH 30V 12A/40A 8TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 30W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8
- Package / Case：8-PowerTDFN
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Overview
BSZ100N03LSGATMA1 is an N-channel enhancement-mode MOSFET from Infineon's OptiMOS 3 series. It features a TDSON-8 surface-mount package with eight pins. Key electrical parameters include a maximum drain-source voltage of 30 V and a continuous drain current of 40 A at 25°C. The device exhibits a maximum on-state resistance of 10 mΩ at 10 V gate drive and 15 mΩ at 4.5 V. Gate threshold voltage ranges from 1 V to 2.2 V, with typical gate charges of 6.3 nC at 4.5 V and 13 nC at 10 V. Power dissipation is rated at 30 W, operating within a temperature range of -55 °C to +150 °C.
Feature Summary
- Logic-level gate drive capability for direct microcontroller interfacing
- Optimized low on-state resistance for high efficiency
- Enhanced thermal performance via TDSON-8 packaging
Applications
- Low-voltage DC-DC converter circuits
- Power management modules in portable devices
- Motor control applications requiring logic-level switching
Procurement Notes
Verify the complete part number including suffix ATMA1 to ensure correct tape-and-reel packaging configuration. Confirm that the TDSON-8 footprint matches your PCB design constraints. Check for RoHS compliance documentation if required by your manufacturing standards. Ensure sourcing channels provide original manufacturer traceability to avoid counterfeit components.
Selection Notes
Select this component when a 30 V rating and 40 A current capacity are required in a compact surface-mount form factor. The logic-level gate threshold simplifies driver circuit design compared to standard threshold devices. Consider the 10 mΩ Rds(on) specification for conduction loss calculations in high-current paths where space is limited.
Part Context
This part belongs to the OptiMOS 3 family, designed for general-purpose power switching. It utilizes silicon technology and is intended for applications demanding reliable performance in automotive and industrial environments. The TDSON-8 package provides a balance between thermal dissipation and board space efficiency.
Replacement Considerations
BSZ100N03MS-G offers similar specifications with potentially different gate charge characteristics. BSZ050N03LSGATMA1 is a related variant within the same series but may have distinct thermal or electrical limits.
