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The BSZ110N06NS3GATMA1 is an N-channel Power MOSFET from Infineon's OptiMOS 3 family, housed in a TSDSON-8 surface-mount package. It features a maximum drain-source voltage of 60 V and a continuous drain current of 20 A at 25°C. The device exhibits a typical on-resistance of 8.8 mΩ at 10 V gate drive and a total gate charge of 25 nC. It supports a power dissipation of 50 W and operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix GATMA1 to confirm reel packaging and tape specifications. Ensure compatibility with standard SMD reflow profiles during assembly. Cross-reference the datasheet version to validate updated electrical limits before finalizing component selection for production.
Select this component when a balance between low conduction loss and fast switching speed is required in space-constrained designs. The 60V rating suits 12V or 24V automotive architectures. Evaluate thermal resistance requirements against the PCB copper area available for heat dissipation in the TSDSON-8 footprint.
This part belongs to the OptiMOS 3 series, engineered for cost-effective yet high-performance power switching. It utilizes silicon technology to deliver reliable operation in demanding environments. The TSDSON-8 package provides a compact solution suitable for modern automated surface-mount assembly lines.
Direct substitutes include BSZ110N06NS3-G and BSZ110N06NS3 G. Verify pinout compatibility and ensure equivalent thermal and electrical ratings match the original design requirements.