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Product Detailed Parameters
- Description：MOSFET N-CH 30V 10A/35A 8TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：13mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：970 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8
- Package / Case：8-PowerTDFN
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Overview
BSZ130N03LSGATMA1 is an N-channel enhancement-mode power MOSFET from Infineon’s OptiMOS 3 series. It features a maximum drain-source voltage of 30 V and a continuous drain current of 28 A, with an absolute maximum rating of 35 A. The device exhibits a low on-resistance of 13 mΩ and supports avalanche energy ratings of 9 mJ. Packaged in an 8-pin TDSON (TSOP-8) surface-mount format, it operates within a temperature range of -55 °C to +150 °C, dissipating up to 69 W.
Feature Summary
- Logic-level compatible gate threshold for direct microcontroller interfacing
- Avalanche-rated construction for robust transient handling
- Integrated body diode for synchronous rectification applications
Applications
- Low-voltage DC-DC converter output stages
- Synchronous rectification in point-of-load modules
- Motor control bridge circuits
Procurement Notes
Verify the specific suffix 'ATMA1' against official Infineon documentation to confirm tape-and-reel packaging and RoHS compliance status. Ensure the part number matches the exact electrical characteristics required for your design, as minor variations exist within the OptiMOS 3 family. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement specifications.
Selection Notes
Select this component when a balance between low conduction losses and high surge capability is required in compact designs. The 13 mΩ on-resistance minimizes thermal dissipation compared to higher resistance alternatives. Consider the 8-pin TDSON package for efficient heat transfer to the PCB copper plane while maintaining a small footprint suitable for dense layouts.
Part Context
This device belongs to Infineon’s OptiMOS 3 portfolio, engineered for low-side switching in automotive and industrial environments. It utilizes advanced trench technology to achieve superior figure-of-merit values. The BSZ130N03LSGATMA1 variant specifically targets applications demanding reliable performance under high-current conditions with strict space constraints.
Replacement Considerations
BSC030N03LSGATMA1 offers similar 30 V/100 A ratings but differs significantly in on-resistance and current capacity. BSZ130N03MSGATMA1 provides comparable voltage ratings but features different thermal and electrical characteristics. Verify pinout compatibility and thermal resistance parameters before substituting.
