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Product Detailed Parameters
- Description：MOSFET N-CH 100V 40A 8TSDSON
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 33µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 63W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8
- Package / Case：8-PowerTDFN
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Overview
The BSZ150N10LS3GATMA1 is an N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS 3 technology. It features a 100 V drain-source voltage and a continuous drain current of 40 A at 25°C. The device offers a maximum on-state resistance of 15 mΩ at 10 V gate drive. It operates within a temperature range of -55°C to +150°C and is housed in a TSDSON-8 surface-mount package.
Feature Summary
- OptiMOS 3 technology for optimized switching performance
- Low on-state resistance for high efficiency
- Robust thermal management capabilities
- Surface-mount design for compact integration
Applications
- Server power supply units
- AC-DC power conversion for telecommunications infrastructure
- Power adapters and chargers
- Battery management systems
Procurement Notes
Verify the complete part number including suffixes against official manufacturer documentation to ensure correct specifications. Confirm RoHS compliance status and specific packaging details such as reel or cut tape options directly with authorized distributors. Cross-reference datasheet revisions to validate electrical parameters before finalizing procurement decisions.
Selection Notes
Select this component for applications requiring high current handling in a small footprint. The low RDS(on) minimizes conduction losses, while the wide operating temperature range supports demanding environments. Ensure gate drive voltages align with the specified thresholds for optimal performance and reliability in the target circuit design.
Part Context
This device belongs to the OptiMOS 3 family of N-channel power MOSFETs designed for general-purpose switching applications. It provides a balance of low on-resistance and fast switching speeds. The TSDSON-8 package facilitates efficient heat dissipation and board space savings compared to traditional leaded packages.
Replacement Considerations
Direct substitutes include other BSZ150N10LS3 variants with compatible pinouts and electrical characteristics. Verify package compatibility and thermal resistance values when considering alternative manufacturers. Ensure replacement parts meet the same voltage and current ratings for safe operation.
