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Product Detailed Parameters
- Description：MOSFET N-CH 60V 11.5A TO220AB
- Series：TEMPFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V
- Rds On (Max) @ Id, Vgs：170mOhm @ 5.8A, 4.5V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：560 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BTS113AE3064NKSA1 is an N-channel MOSFET from Infineon Technologies, packaged in a TO-220AB through-hole configuration. It features a drain-to-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 11.5 A at case temperature. The device supports a power dissipation of 40 W at the case. This component is classified as obsolete and is no longer manufactured by the supplier.
Feature Summary
- N-channel vertical power FET technology
- Through-hole TO-220AB package for robust mounting
- High current handling capability with 11.5 A rating
Applications
- General purpose switching applications
- Power distribution circuits
- Load control systems
Procurement Notes
This part number is officially marked as obsolete and is no longer in production. Sourcing new original components directly from Infineon or authorized distributors is not possible. Verification of availability should focus on identifying valid substitute parts or checking secondary market suppliers for existing stock, ensuring authenticity and condition are rigorously confirmed before procurement.
Selection Notes
Designers requiring this specific 60 V, 11.5 A specification must account for the component's obsolete status. Selection should prioritize evaluating alternative active parts that match the electrical parameters and thermal performance. Compatibility with the TO-220AB footprint may require PCB redesign if the substitute uses a different package type. Verify that any replacement meets the required voltage and current ratings for the intended load.
Part Context
The BTS113AE3064NKSA1 belongs to the broader category of single N-channel MOSFETs produced by Infineon Technologies. It utilizes standard silicon MOSFET technology housed in a plastic TO-220AB package. This form factor is commonly used in industrial and automotive applications where through-hole mounting provides mechanical stability. The device represents a legacy solution within the manufacturer's discrete power transistor portfolio.
Replacement Considerations
Public records indicate IRFZ14SPBF by Vishay Siliconix as a similar available substitute. Designers should verify pinout compatibility and thermal characteristics when transitioning to this alternative.
