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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：TEMPFET®
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：100mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：50W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO220-3-5
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BTS114AE3045A is an N-channel power MOSFET from Infineon Technologies, designed for surface-mount applications. It features a PG-TO220-3-5 package and operates with a drain-source voltage of 50 V. The device supports a continuous drain current of 17 A at case temperature and handles up to 50 W of power dissipation. It functions within a junction temperature range of -55°C to +150°C.
Feature Summary
- N-channel enhancement mode construction
- Surface-mount PG-TO220-3-5 packaging
- High thermal stability up to 150°C
Applications
- Moderate-power switching circuits
- General-purpose power management
- Industrial control systems
Procurement Notes
Verify the specific suffix E3045A against official Infineon documentation to confirm pinout and electrical characteristics. Ensure the PG-TO220-3-5 package variant matches your PCB footprint requirements. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring reliable N-channel switching in moderate-power environments. The 50V rating and 17A current capacity suit various load applications. Consider the surface-mount package for automated assembly processes. Verify thermal management solutions are adequate for the 50W dissipation capability under expected operating conditions.
Part Context
This part belongs to Infineon's discrete power MOSFET portfolio. It utilizes silicon technology for robust performance. The device is engineered for durability in demanding electronic environments. Its design focuses on efficient power handling and thermal resilience for long-term operational stability.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Infineon's official cross-reference tools or contact technical support directly for verified alternative components that match the required electrical and mechanical specifications.
