BUH150G

Single Bipolar Transistors Overview

The BUH150G is a single NPN bipolar junction transistor manufactured by onsemi. It features a maximum collector current of 15 A and a collector-emitter voltage rating of 400 V. The device has a power dissipation capacity of 150 W and operates within a temperature range from -65 °C to +150 °C. It utilizes a TO-220AB through-hole package with three pins. The minimum DC current gain (hFE) is specified at 4.

Single Bipolar Transistors Feature Summary

• High-voltage capability for robust switching applications
• High continuous collector current handling
• Through-hole mounting for secure mechanical attachment

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Power supply output stages
• Industrial motor control systems

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the TO-220AB package dimensions match the thermal management design requirements. Ensure compliance with relevant environmental directives such as RoHS standards applicable to the target market.

Single Bipolar Transistors Selection Notes

Select this component when high voltage blocking capability and substantial current handling are required in a standard through-hole format. Consider the thermal resistance and heat sinking needs associated with the 150 W power dissipation rating. Evaluate the low minimum current gain specification for base drive circuit complexity.

Single Bipolar Transistors Part Context

This part belongs to the family of high-power NPN transistors designed for demanding power electronics environments. It serves as a discrete semiconductor solution for amplifying or switching electronic signals in high-energy circuits, distinct from lower-power signal transistors or integrated power modules.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: None identified.