BUJ106A,127

Single Bipolar Transistors Overview

The BUJ106A,127 is a high-voltage, high-speed planar-passivated NPN power switching transistor manufactured by WeEn Semiconductors. It is housed in a plastic full-pack envelope designed for through-hole mounting. The device supports a maximum DC collector current of 8 A and withstands a collector-emitter voltage of 400 V. Key electrical characteristics include a minimum DC current gain (hFE) of 10 and a total power dissipation rating of 26 W. The component operates at a maximum junction temperature of 150°C with a specified fall time of 20 ns.

Single Bipolar Transistors Feature Summary

• High-speed planar-passivated NPN structure optimized for rapid switching applications
• Robust high-voltage capability suitable for demanding power electronics environments
• Designed for efficient thermal management within plastic full-pack envelopes

Single Bipolar Transistors Applications

• High frequency electronic lighting ballast systems
• Power converters and inverters
• Switching regulators
• Motor control systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation to ensure alignment with required manufacturing standards and compliance certifications. Confirm that the plastic full-pack envelope matches the intended PCB footprint and thermal requirements. Cross-reference the manufacturer's latest datasheet for any updates regarding RoHS or REACH compliance status before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage handling combined with fast switching speeds. Ensure the thermal design accommodates the 26 W power dissipation limit under expected operating conditions. Verify that the 8 A current rating exceeds peak load demands to maintain reliability in motor control or power conversion topologies.

Single Bipolar Transistors Part Context

This part belongs to the BUJ series of silicon diffused power transistors originally developed by Philips Semiconductors and now produced by WeEn Semiconductors. The series is characterized by its robust construction for high-frequency applications. The BUJ106A variant specifically targets high-voltage switching needs within industrial and consumer power electronics sectors.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for equivalent high-voltage NPN transistors with comparable current and voltage ratings. Verify pinout compatibility and package dimensions before replacing the original component in existing designs.