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Product Detailed Parameters
- Description：IC 9675 AUTO 64QFP
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Tray
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The BUK3F00-50WDFE,518 is an N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. It utilizes TrenchMOS technology to achieve low on-state resistance and conduction losses. The device is housed in a DFN2020-6 package, designed for surface-mount applications. It operates with a logic-level gate drive, making it suitable for efficient switching in power management circuits. The component is qualified according to automotive standards for critical applications.
Feature Summary
- Low conduction losses due to optimized TrenchMOS technology
- Logic level gate drive capability for direct interface with control signals
- Automotive qualification compliant with Q101 standards
Applications
- 12 V, 24 V and 42 V load switching
- Automotive power distribution systems
- General purpose power switching
Procurement Notes
Verify the specific suffix 518 against official Nexperia documentation to confirm tape and reel specifications. Ensure the DFN2020-6 package dimensions match the target PCB footprint. Confirm RoHS compliance status through the latest datasheet revision before finalizing procurement orders.
Selection Notes
Select this component for designs requiring low Rds(on) in a compact surface-mount form factor. The logic-level gate drive simplifies driver circuit design. Verify thermal performance requirements align with the DFN2020-6 package capabilities for the intended current load.
Part Context
This part belongs to the BUK3F series of N-channel TrenchMOS FETs from Nexperia. The series is engineered for high-efficiency power switching applications. The DFN2020-6 package provides a small footprint suitable for space-constrained electronic assemblies.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinouts and electrical characteristics carefully when considering alternative manufacturers.
