BUK4D122-20PX

$0.08

Description：BUK4D122-20PX
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:c7cf72b73d0c Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：BUK4D122-20PX
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

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BUK4D122-20PX

Overview

The Nexperia BUK4D122-20PX is a P-channel enhancement mode Trench MOSFET in a DFN2020MD-6 package. It features a drain-source voltage of -20 V and a continuous drain current of -3.2 A at 25 °C. The on-state resistance is typically 100 mΩ at VGS = -4.5 V. The device supports an extended junction temperature range up to 175 °C, includes ESD protection exceeding 2 kV HBM, and holds AEC-Q101 qualification.

Feature Summary

Utilizes Trench MOSFET technology for optimized performance
Features a leadless ultra-thin plastic package with tin-plated side pads
Includes ElectroStatic Discharge (ESD) protection exceeding 2 kV HBM
Qualified according to the AEC-Q101 automotive standard

Applications

Relay driver
High-speed line driver
High-side loadswitch
Switching circuits

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as tape and reel specifications. Ensure the component meets the required AEC-Q101 automotive qualification standards for your target application environment before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring a compact P-channel switch with high thermal tolerance. The low on-state resistance and small footprint make it suitable for space-constrained designs. Verify that the gate drive voltage aligns with the specified threshold characteristics for optimal switching performance.

Part Context

This part belongs to the BUK4D series of P-channel Trench MOSFETs from Nexperia. These devices are designed for medium power applications utilizing advanced trench technology. The DFN2020MD-6 package provides efficient thermal dissipation through solderable side pads, supporting reliable operation in demanding environments.