BUK4D16-20H

$0.46

Description：SMALL SIGNAL MOSFETS FOR AUTOMOT
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0b86b643a40b Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：SMALL SIGNAL MOSFETS FOR AUTOMOT
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：8.5A (Ta), 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 8V
Rds On (Max) @ Id, Vgs：14mOhm @ 9A, 8V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：931 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 19W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

Download product information

BUK4D16-20H

Overview

The BUK4D16-20H is an N-channel Trench MOSFET in a DFN2020MD-6 (SOT1220) package. It features a drain-source voltage of 20 V and a continuous drain current of 26 A at 25 °C. The device has a maximum on-state resistance of 16 mΩ at VGS = 4.5 V and 25 °C. Total power dissipation reaches 19 W at 25 °C. Gate-source voltage limits are ±12 V, with a threshold voltage ranging from 0.6 V to 1.3 V. Junction temperature extends up to 175 °C.

Feature Summary

AEC-Q101 qualified for automotive applications
Trench MOSFET technology for low on-resistance
Extended junction temperature range up to 175 °C
Side wettable flanks enable optical solder inspection

Applications

DC to DC conversion
High-speed line driver
Low-side load switch
Switching circuits

Procurement Notes

Verify the specific suffix 'H' against the official Nexperia ordering information table to confirm packaging details such as reel or cut tape specifications. Ensure the component matches the DFN2020MD-6 package outline and SOT1220 version. Confirm that the marking code corresponds to the intended production revision before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high current handling in a compact leadless package. The low RDSon minimizes conduction losses in power switching applications. Verify thermal management requirements given the 175 °C rating and ensure gate drive voltages remain within the specified ±12 V limits for reliable operation across the extended temperature range.

Part Context

This part belongs to Nexperia's N-channel Trench MOSFET portfolio, utilizing advanced trench technology for improved performance. It is housed in the DFN2020MD-6 package, which offers thermal enhancement and side-wettable flanks for quality inspection. The device is designed for robust performance in demanding environments, including automotive systems.

Replacement Considerations

Check for direct substitutes within the same Nexperia series with identical pinouts and electrical ratings. Verify package compatibility and thermal characteristics when considering alternative manufacturers. Ensure any replacement meets the same AEC-Q101 qualification standards if used in automotive contexts.