BUK4D16-20X

$0.62

Description：SMALL SIGNAL MOSFET FOR AUTOMOTI
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:50177144fb63 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：SMALL SIGNAL MOSFET FOR AUTOMOTI
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：8.5A (Ta), 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 8V
Rds On (Max) @ Id, Vgs：14mOhm @ 9A, 8V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：931 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 19W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

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BUK4D16-20X

Overview

The Nexperia BUK4D16-20 is a 20 V N-channel Trench MOSFET in a DFN2020MD-6 (SOT1220) package. It features a drain-source voltage of 20 V, continuous drain current of 26 A at 25 °C, and on-state resistance of 13 mΩ typical at VGS=4.5 V. The device supports junction temperatures up to 175 °C, offers ESD protection exceeding 2 kV HBM, and includes side wettable flanks for optical inspection.

Feature Summary

AEC-Q101 qualified for automotive applications
Extended temperature range with Tj = 175 °C rating
Side wettable flanks enable optical solder inspection
High electrostatic discharge protection exceeding 2 kV HBM

Applications

DC to DC conversion
High-speed line driver
Low-side load switch
Switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape configuration. Confirm that the component meets the required AEC-Q101 qualification standards for your target application environment before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring low on-state resistance and high thermal stability in compact footprints. The DFN2020MD-6 package provides efficient heat dissipation suitable for power management tasks. Ensure gate drive voltages align with the specified threshold characteristics for optimal switching performance.

Part Context

This part belongs to Nexperia's medium-power Trench MOSFET portfolio designed for surface-mount assembly. The technology integrates advanced trench structures to minimize conduction losses while maintaining robust avalanche ruggedness. It serves as a standard solution for general-purpose power switching in constrained board spaces.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout compatibility and thermal resistance values when evaluating potential replacements to ensure circuit integrity is maintained without redesign.