BUK4D72-30X

$0.14

Description：BUK4D72-30X
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:0698008ec7d5 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：BUK4D72-30X
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

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BUK4D72-30X

Overview

The BUK4D72-30 is a 30 V N-channel Trench MOSFET in a leadless DFN2020MD-6 (SOT1220) package. It features an extended temperature range up to 175 °C and AEC-Q101 qualification. Key electrical parameters include a drain-source voltage of 30 V, a continuous drain current of 3.8 A at 25 °C, and a maximum on-state resistance of 72 mΩ at VGS = 4.5 V. The device offers high ESD protection exceeding 1.5 kV HBM and utilizes tin-plated side pads for optical inspection.

Feature Summary

Extended junction temperature rating up to 175 °C
AEC-Q101 qualified for automotive applications
Tin-plated side pads enable optical solder inspection
High electrostatic discharge protection exceeding 1.5 kV HBM

Applications

Relay driver
High-speed line driver
Low-side load switch
Switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package variant and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 automotive qualification standards for your target application environment. Ensure design compatibility with the DFN2020MD-6 footprint dimensions and thermal requirements.

Selection Notes

Select this component for designs requiring robust performance in thermally demanding environments due to its 175 °C rating. The low on-state resistance supports efficient power switching in compact layouts. Verify gate drive voltage compatibility, as RDSon varies significantly between 2.5 V and 4.5 V logic levels. Consider the small package size for space-constrained PCB implementations.

Part Context

This part belongs to Nexperia's 30 V N-channel Trench MOSFET portfolio, designed for industrial and automotive use. It utilizes TrenchMOS technology to achieve low conduction losses within a leadless ultra-thin SMD plastic package. The product is intended for general-purpose power switching and load control applications where high reliability and thermal stability are critical.