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Product Detailed Parameters
- Description：MOSFET N-CH 55V 90A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：82 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5160 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：158W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK6207-55C is an N-channel enhancement mode Field-Effect Transistor utilizing advanced TrenchMOS technology. It features a drain-source voltage of 55 V and a continuous drain current of 90 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 7.8 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 158 W at 25 °C, with a junction temperature range from -55 °C to +175 °C.
Feature Summary
- Compliant with the AEC-Q101 standard for high-performance automotive applications
- Compatible with logic and standard level gate drives
- Suitable for thermally demanding environments due to a 175 °C rating
Applications
- 12 V and 24 V automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify component authenticity through official Nexperia channels or authorized distributors. Confirm the specific ordering suffix matches requirements. Check the latest datasheet revision for any updates to electrical characteristics or package dimensions before finalizing designs.
Selection Notes
Select this component for circuits requiring robust switching capabilities in automotive environments. Ensure thermal management strategies accommodate the specified power dissipation limits. Verify that gate drive voltages align with the intermediate level compatibility specifications for optimal performance.
Part Context
This part belongs to the Nexperia BUK6 series of N-channel MOSFETs designed for automotive use. It employs TrenchMOS technology to achieve low on-resistance and high current handling within a DPAK (SOT428) surface-mounted package suitable for automated assembly processes.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-reference pin configurations and electrical parameters carefully when considering alternatives.
