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Product Detailed Parameters
- Description：MOSFET N-CH 40V 42A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：1170 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：60W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK6218-40C,118 is an N-channel TrenchMOS intermediate level Field-Effect Transistor in a DPAK (SOT428) plastic package. It features a drain-source voltage of 40 V and a continuous drain current of 42 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 16 mΩ at VGS=10V and ID=10A. Total power dissipation reaches 60 W. It supports junction temperatures up to 175 °C and includes avalanche ruggedness with non-repetitive energy ratings of 25 mJ.
Feature Summary
- Compliant with AEC Q101 automotive standards for critical applications
- Operates reliably in thermally demanding environments with a 175 °C rating
- Compatible with standard and logic level gate drive sources
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoids
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix matches the required configuration. Confirm the datasheet revision aligns with design requirements. Ensure thermal management strategies account for the specified mounting base temperature dependencies. Validate that application conditions remain within the absolute maximum ratings defined in the official documentation.
Selection Notes
Select this component for high-current switching tasks requiring automotive qualification. Consider the low on-state resistance for efficiency in power paths. Evaluate thermal performance based on the provided safe operating area curves. Ensure gate drive voltages support the specified threshold and on-state characteristics for optimal conduction.
Part Context
This part belongs to Nexperia's TrenchMOS family, utilizing advanced trench technology for improved performance. It is designed as an intermediate level FET suitable for robust power switching. The DPAK package provides efficient heat dissipation through the mounting base connected to the drain terminal.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully. Verify package compatibility and thermal characteristics before implementation.
