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Product Detailed Parameters
- Description：MOSFET N-CH 30V 90A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：5.2mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：54.8 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：3470 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：128W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK625R2-30C is an N-channel TrenchMOS intermediate level FET designed for high-performance automotive applications. It features a 30 V drain-source voltage rating and supports up to 90 A continuous drain current in a DPAK (SOT428) plastic package. The device utilizes advanced TrenchMOS technology, offering low on-state resistance of 5.2 mΩ at 15 A and 10 V gate drive. Qualified to the AEC-Q101 standard, it operates with junction temperatures up to 175 °C and includes internal source-drain diode characteristics.
Feature Summary
- AEC-Q101 compliant for automotive reliability
- Advanced TrenchMOS technology for low conduction losses
- Suitable for standard and logic level gate drive sources
- Operates in thermally demanding environments up to 175 °C
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and tape/reel specifications. Confirm that the component meets the required AEC-Q101 qualification standards for your target automotive application. Ensure thermal management designs account for the mounting base temperature limitations defined in the datasheet figures.
Selection Notes
Select this component for applications requiring robust N-channel switching with intermediate gate drive compatibility. The DPAK package provides effective thermal dissipation for high-current loads. Verify that the 30 V breakdown voltage aligns with system rail requirements and that the 90 A current capability suits the peak load demands without exceeding safe operating area limits.
Part Context
This part belongs to Nexperia's BUK6 series of N-channel TrenchMOS FETs. These devices are engineered for automotive-grade performance, combining high current handling with low on-resistance. The series is widely used in power distribution and motor control circuits within vehicle electrical architectures.
Replacement Considerations
Check for direct substitutes within the BUK6 series or other Nexperia DPAK packages with matching 30 V ratings and comparable RDS(on) values. Ensure any replacement maintains AEC-Q101 compliance and compatible pinout configurations for SOT428 footprints.
