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Product Detailed Parameters
- Description：PFET, 100A I(D), 55V, 0.0105OHM,
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：82 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：5.16 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：158W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK6507-55C is an N-channel TrenchMOS logic and standard level Field-Effect Transistor (FET) designed for high-performance automotive applications. It features a drain-source voltage of 55 V, a continuous drain current of 100 A at 25 °C mounting base temperature, and a total power dissipation of 158 W. The device exhibits a maximum on-state resistance of 5.87 mΩ at VGS = 10 V and ID = 25 A. It supports junction temperatures up to 175 °C and includes avalanche ruggedness with a non-repetitive energy rating of 128 mJ.
Feature Summary
- AEC Q101 compliant for automotive reliability
- Suitable for standard and logic level gate drives
- Operates in thermally demanding environments with a 175 °C rating
Applications
- 12 V and 24 V automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering information against the manufacturer's latest documentation to ensure compatibility with your design requirements. Confirm that the TO-220AB package variant matches your thermal management strategy. Check for any recent product change notices or longevity program updates regarding availability and supply chain stability before finalizing procurement plans.
Selection Notes
Select this component when designing circuits requiring robust N-channel MOSFETs for automotive power switching. Consider its low on-state resistance and high current capability for efficient power handling. Ensure your gate drive circuitry aligns with its logic and standard level requirements. Evaluate thermal constraints carefully given the 175 °C junction temperature limit and associated power dissipation characteristics.
Part Context
This part belongs to Nexperia's portfolio of discrete, logic, and PowerMOS semiconductors. Originally developed under NXP Semiconductors, it utilizes advanced TrenchMOS technology. The product line focuses on delivering reliable solutions for automotive, industrial, computing, consumer, and wearable markets, emphasizing high performance and durability in challenging operating conditions.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Do not assume cross-compatibility with other N-channel MOSFETs without verifying pinout, electrical parameters, and package dimensions against the original datasheet specifications.
