BUK6507-75C,127

Description：MOSFET N-CH 75V 100A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:f41a6097aec4 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 75V 100A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：123 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：7600 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：204W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK6507-75C,127

Overview

The BUK6507-75C is an N-channel enhancement mode Field-Effect Transistor utilizing advanced TrenchMOS technology. Designed for high-performance automotive applications, it complies with the AEC Q101 standard. The device features a drain-source voltage of 75 V and supports a continuous drain current of 100 A at a mounting base temperature of 25 °C. It operates within a junction temperature range of -55 °C to 175 °C. The total power dissipation reaches 204 W at 25 °C. The on-state resistance is specified between 6.5 mΩ and 7.6 mΩ at 25 °C. The component is housed in a TO-220AB plastic package.

Feature Summary

Compliant with AEC Q101 standards for automotive reliability
Suitable for intermediate level gate drive sources
Operates in thermally demanding environments up to 175 °C

Applications

12 V and 24 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package type and tape/reel specifications. Confirm that the intended application environment remains within the absolute maximum ratings defined in the datasheet. Ensure thermal management designs account for the junction-to-mounting base thermal resistance characteristics provided in the technical data.

Selection Notes

Select this component for circuits requiring robust N-channel switching with intermediate gate drive compatibility. The TO-220AB package facilitates heatsink mounting for high-power dissipation scenarios. Verify that the required drain current and voltage levels align with the device's 100 A and 75 V limits under expected operating temperatures.

Part Context

This part belongs to the Nexperia TrenchMOS family of N-channel MOSFETs. It is manufactured using advanced trench technology to minimize conduction losses. The product was originally released by NXP Semiconductors before being integrated into the Nexperia portfolio. It serves as a specialized solution for automotive power distribution and motor control applications.