SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BUK6510-75C is an N-channel TrenchMOS FET designed for high-performance automotive applications. It features a drain-source voltage (VDS) of 75 V and a continuous drain current (ID) of 77 A at a mounting base temperature of 25 °C. The device supports a total power dissipation of 158 W under the same conditions. Static characteristics include a maximum on-state resistance (RDSon) of 13 mΩ at VGS = 5 V and ID = 15 A, and 10.4 mΩ at VGS = 10 V and ID = 25 A. It operates within a junction temperature range of -55 °C to 175 °C.
Verify the specific ordering suffix against manufacturer documentation to confirm package type and tape/reel specifications. Confirm that the component meets the required AEC-Q101 qualification status for your target application. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values provided in the datasheet.
Select this component for applications requiring robust switching capabilities in automotive environments. The 75 V rating and 77 A current capacity suit high-power load switching. Verify gate drive compatibility with intermediate level drivers. Consider the TO-220AB package for heatsink mounting requirements and ensure adequate thermal dissipation paths are designed into the system.
This part belongs to Nexperia's TrenchMOS portfolio, utilizing advanced trench technology for low on-state resistance. It is specifically qualified for automotive use, adhering to strict reliability standards. The product line focuses on providing efficient power switching solutions for electric power steering, transmission control, and other critical vehicle systems.
Check for direct cross-reference part numbers from Nexperia or other manufacturers that match the 75 V, 77 A, TO-220AB specification. Ensure any substitute maintains AEC-Q101 compliance and similar thermal and electrical characteristics.