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Product Detailed Parameters
- Description：MOSFET N-CH 30V 100A TO220AB
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：114 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：6960 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：204W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK652R7-30C is an N-channel TrenchMOS intermediate level Field-Effect Transistor designed for high-performance automotive applications. It operates with a drain-source voltage of 30 V and supports continuous drain currents up to 100 A at a mounting base temperature of 25 °C. The device features a low on-state resistance of 2.72 mΩ (typical) at VGS = 10 V and ID = 25 A, ensuring efficient power switching. It is qualified to the AEC-Q101 standard and supports junction temperatures up to 175 °C.
Feature Summary
- AEC-Q101 compliant for automotive reliability
- Advanced TrenchMOS technology for optimized performance
- Extended thermal capability supporting 175 °C junction temperature
- Suitable for intermediate-level gate drive sources
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm that the component status aligns with current production requirements. Ensure compliance with RoHS directives if applicable to the target market. Validate that the supplier provides original manufacturer documentation to guarantee authenticity and traceability.
Selection Notes
Select this component for designs requiring robust automotive-grade switching capabilities. Consider the TO-220AB package for effective heat dissipation in high-current scenarios. Evaluate the thermal resistance characteristics against the expected operating environment. Ensure the gate drive circuitry can support the specified threshold voltages for optimal switching performance.
Part Context
This part belongs to NXP's TrenchMOS family of N-channel enhancement mode MOSFETs. These devices are engineered for medium-power applications utilizing advanced trench technology. The product line emphasizes durability and efficiency for demanding environments, particularly within the automotive sector where reliability standards are stringent.
Replacement Considerations
Consult official NXP documentation for verified substitute part numbers. Cross-reference pin configurations and electrical parameters before implementation. Verify package compatibility and thermal characteristics to ensure seamless integration into existing designs.
