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Product Detailed Parameters
- Description：PFET, 120A I(D), 55V, 0.0048OHM,
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：258 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：15.3 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：306W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK653R2-55C,127 is an N-channel TrenchMOS intermediate level field-effect transistor manufactured by Nexperia USA Inc. It utilizes advanced TrenchMOS technology to provide low conduction losses and high performance in a plastic package. Designed for automotive applications, it complies with the AEC-Q101 standard. The device supports standard and logic level gate drive sources and is suitable for thermally demanding environments due to its 175 °C rating.
Feature Summary
- N-channel enhancement mode FET using advanced TrenchMOS technology
- AEC-Q101 compliant for high-performance automotive applications
- Suitable for standard and logic level gate drive sources
- Rated for operation in thermally demanding environments up to 175 °C
Applications
- 12 V and 24 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific suffix '127' against official Nexperia documentation to confirm tape and reel specifications. Confirm that the component meets current RoHS and REACH compliance requirements as stated in the manufacturer's datasheet. Ensure the ordering part number matches the exact electrical characteristics required for the target application before procurement.
Selection Notes
Select this component for designs requiring robust N-channel switching in automotive environments. Its TrenchMOS technology offers low on-state resistance for efficient power handling. Verify compatibility with available gate drive voltages, as it supports both logic and intermediate levels. Ensure thermal management strategies accommodate the 175 °C junction temperature rating for reliable long-term operation.
Part Context
This part belongs to Nexperia's portfolio of analog and logic ICs and discrete semiconductors. It is specifically categorized under power MOSFETs designed for automotive critical applications. The product line emphasizes low dynamic and static功耗 solutions with flexible packaging options to assist design engineers in meeting space and performance constraints.
Replacement Considerations
Consult official Nexperia substitution guides or distributor cross-reference tools for verified equivalent parts. Do not assume pin-compatible alternatives without verifying electrical parameters such as Rds(on) and Vgs thresholds against the original specification sheet.
