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Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：125 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：8.02 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：204W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK653R4-40C,127 is an N-channel TrenchMOS intermediate level FET designed for high-performance automotive applications. It features a drain-source voltage (VDS) of 40 V and a continuous drain current (ID) of 100 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance (RDSon) of 3.6 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 204 W at 25 °C. It supports junction temperatures up to 175 °C and includes avalanche ruggedness rated at 368 mJ.
Feature Summary
- AEC-Q101 compliant for automotive reliability
- Compatible with standard and logic level gate drive sources
- Operates in thermally demanding environments up to 175 °C
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring robust switching capabilities within a 40 V system. The TO-220AB package facilitates heatsink mounting for effective thermal management. Ensure gate drive voltages align with the specified RDSon conditions to optimize conduction losses. Consider the internal source-drain diode characteristics for inductive load handling.
Part Context
This part belongs to Nexperia's TrenchMOS portfolio, utilizing advanced trench technology to achieve low on-state resistance. It is engineered specifically for the automotive sector, meeting stringent qualification standards. The device serves as a critical power switching element in vehicle electrical architectures where high current capacity and thermal stability are required.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, package dimensions, and thermal characteristics to ensure functional compatibility without design modification.
