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Product Detailed Parameters
- Description：PFET, 100A I(D), 30V, 0.0072OHM,
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：78 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：4.707 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：158W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK653R7-30C,127 is an N-channel TrenchMOS intermediate level FET manufactured by Nexperia. It features a 30 V drain-source voltage and supports a continuous drain current of 100 A at case temperature. The device is housed in a TO-220AB through-hole package with a thermal resistance capability of 158 W at case temperature.
Feature Summary
- N-channel TrenchMOS technology for low on-resistance
- High current handling capability up to 100 A
- Through-hole TO-220AB packaging for robust mounting
Applications
- Intermediate power switching applications
- DC-DC converter circuits
- Motor control systems
Procurement Notes
Verify the complete part number including the suffix ,127 to ensure correct tape-and-reel or tube packaging configuration as specified by Nexperia. Confirm that the TO-220AB lead form matches your PCB footprint requirements before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring moderate voltage ratings with high current capacity in a standard through-hole format. Ensure adequate heatsinking is provided to maintain junction temperatures within safe operating limits given the 100 A current rating.
Part Context
This device belongs to the Nexperia BUK653 series of N-channel MOSFETs. The series utilizes TrenchMOS technology to achieve improved performance characteristics compared to previous generations, offering lower gate charge and reduced switching losses for efficient power management solutions.
Replacement Considerations
Consult official Nexperia documentation for verified cross-reference part numbers. Do not substitute with generic equivalents without verifying pinout compatibility, thermal characteristics, and electrical parameters against the original datasheet specifications.
