ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 40V 120A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：199 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：11334 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：263W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Download product information
Overview
The Nexperia BUK662R4-40C,118 is an N-channel enhancement mode Field-Effect Transistor utilizing advanced TrenchMOS technology. It is designed for high-performance automotive applications and complies with the AEC-Q101 standard. The device features a maximum drain-source voltage of 40 V and supports a continuous drain current of 120 A at a mounting base temperature of 25 °C. Total power dissipation reaches 263 W under the same conditions. The typical on-state resistance (RDSon) is 2.3 mΩ at VGS = 10 V and ID = 25 A. It operates within a junction temperature range of -55 °C to 175 °C.
Feature Summary
- Compliant with AEC-Q101 standards for automotive reliability
- Compatible with standard and logic level gate drive sources
- Rated for thermally demanding environments up to 175 °C
Applications
- 12 V and 24 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring robust N-channel switching in automotive environments. The low RDSon minimizes conduction losses, while the 175 °C rating allows operation in high-temperature zones. Ensure gate drive voltages align with the specified thresholds for optimal performance and consider thermal management strategies given the package's power dissipation capabilities.
Part Context
This part belongs to the BUK662 series of intermediate level gate drive FETs from Nexperia. These devices are engineered using TrenchMOS technology to provide enhanced performance in plastic packages. The series is specifically qualified for automotive use, ensuring durability and consistency required for critical vehicle systems such as power steering and transmission controls.
Replacement Considerations
Direct substitutes include other Nexperia parts within the BUK662 series or equivalent AEC-Q101 qualified N-channel MOSFETs with matching voltage, current, and package specifications. Verify pinout compatibility and thermal characteristics before substitution.
