ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：PFET, 120A I(D), 55V, 0.005OHM,
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The BUK663R5-55C is an N-channel TrenchMOS intermediate level FET designed for high-performance automotive applications. It features a drain-source voltage (VDS) of 55 V and a continuous drain current (ID) of 100 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance (RDSon) of 3.5 mΩ at VGS = 10 V and ID = 15 A. Total power dissipation reaches 263 W under specified conditions, with a junction temperature rating up to 175 °C.
Feature Summary
- Qualified to the AEC-Q101 standard for automotive use
- Operates in thermally demanding environments with a 175 °C junction temperature rating
- Suitable for intermediate level gate drive sources
Applications
- 12 V and 24 V Automotive systems
- ABS/ESP
- Engine management
- HVAC
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and reel specifications. Confirm that the component status remains active or production-ready before design finalization. Cross-reference the datasheet revision date to ensure alignment with current manufacturing standards and legal disclaimers provided by the manufacturer.
Selection Notes
Select this component for circuits requiring robust avalanche ruggedness and low conduction losses in automotive power stages. Ensure the gate drive source matches the intermediate level requirements. Verify thermal management capabilities align with the specified junction-to-mounting base thermal resistance for the intended operating environment.
Part Context
This part belongs to the Nexperia BUK663 series of N-channel TrenchMOS FETs. These devices utilize advanced trench technology to deliver high current handling and low on-resistance within a D2PAK plastic surface-mounted package. The series is engineered specifically for demanding automotive electrical loads and power switching applications.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original specification sheet.
