BUK664R8-75C,118

$1.34

Description：MOSFET N-CH 75V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e913cd19f045 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 75V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：177 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：11400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：263W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Download product information

BUK664R8-75C,118

Overview

The BUK664R8-75C,118 is an N-channel TrenchMOS FET designed for intermediate level gate drive applications. It utilizes advanced TrenchMOS technology and meets AEC-Q101 standards for automotive use. The device features a 75 V drain-source voltage rating and supports a continuous drain current of 120 A at 25 °C mounting base temperature. Total power dissipation reaches 263 W under the same conditions. The on-state resistance is typically 4.35 mΩ at 25 °C junction temperature with a 10 V gate drive.

Feature Summary

AEC-Q101 compliant for high performance automotive applications
Suitable for intermediate level gate drive sources
Operates in thermally demanding environments due to 175 °C rating

Applications

12 V, 24 V and 42 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component status remains active as product specifications may change. Ensure compatibility with the intended thermal management solution given the D2PAK package constraints. Cross-reference the latest datasheet revision to confirm all electrical parameters align with the design requirements.

Selection Notes

Select this component for circuits requiring robust avalanche ruggedness and low conduction losses. The 75 V rating provides adequate headroom for standard automotive bus voltages. Consider the thermal resistance characteristics when designing heat sinks for high-current loads. Verify gate drive voltage levels to ensure optimal RDSon performance across the operating temperature range.

Part Context

This part belongs to the Nexperia BUK66 series of N-channel enhancement mode Field-Effect Transistors. The series employs TrenchMOS technology to achieve low on-state resistance and high efficiency. These devices are specifically engineered for plastic packages suitable for surface-mount assembly in demanding electronic environments.