BUK6D120-40EX

$0.47

Description：MOSFET N-CH 40V 2.9A/5.7A 6DFN
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:365d8890aaa1 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 2.9A/5.7A 6DFN
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：2.9A (Ta), 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：120mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：3.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：113 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 7.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

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BUK6D120-40EX

Overview

The Nexperia BUK6D120-40EX is a single N-channel enhancement mode Trench MOSFET housed in a DFN2020MD-6 (SOT1220) surface-mount package. It features a drain-source voltage rating of 40 V and a continuous drain current of 5.7 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 120 mΩ at VGS = 10 V and 25 °C, with a total gate charge of 3.6 nC. It supports an extended junction temperature range up to 175 °C and includes side wettable flanks for optical inspection.

Feature Summary

Side wettable flanks enable visual solder joint inspection.
AEC-Q101 qualified for automotive reliability standards.
ESD protection exceeding 1 kV HBM rating.

Applications

Relay driver
High-speed line driver
Low-side load switch

Procurement Notes

Verify the specific suffix 'EX' against the official datasheet to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure the ordering code matches the required thermal and mechanical parameters for your PCB layout. Confirm RoHS compliance status through the manufacturer's latest documentation before finalizing procurement.

Selection Notes

Select this component when a compact footprint is required alongside moderate current handling capabilities. The low gate charge facilitates efficient switching performance in high-frequency applications. Verify that the thermal design accommodates the specified power dissipation limits under your operating conditions.

Part Context

This device belongs to Nexperia's portfolio of medium-power silicon MOSFETs utilizing Trench technology. It is designed for applications demanding robust performance within small surface-mount packages. The product line emphasizes efficiency and reliability for modern electronic systems.

Replacement Considerations

Consult the official Nexperia replacement guide for verified cross-reference part numbers. Do not substitute based solely on pinout compatibility without verifying electrical parameter alignment.