SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Nexperia BUK6D20-40EX is an N-channel enhancement mode MOSFET utilizing Trench technology, housed in a DFN2020MD-6 (SOT1220) leadless package. It features a drain-source voltage of 40 V and a continuous drain current of 19 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 20 mΩ at VGS=10 V and ID=8 A. Total power dissipation reaches 15 W at 25 °C case temperature. Junction temperature extends to 175 °C, with thermal resistance from junction to ambient at 57 K/W.
Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration. Ensure the component matches the required automotive qualification status if deployed in vehicle systems. Confirm that the DFN2020MD-6 footprint aligns with the target PCB design constraints before finalizing procurement orders.
Select this component for designs requiring low on-resistance within a compact, leadless form factor. The 40 V rating suits low-voltage DC-DC converters and motor control interfaces. Verify thermal management capabilities based on the specified junction-to-ambient resistance values under actual board copper area conditions.
This device belongs to Nexperia's medium-power MOSFET portfolio designed for surface-mount assembly. The DFN2020MD-6 package provides enhanced thermal dissipation compared to standard small outlines. It targets applications demanding high efficiency and robust operation in constrained spaces.
BUK6D20-40E
The maximum operating junction temperature is 175 °C.
Yes, the DFN2020MD-6 package includes side wettable flanks specifically designed to allow optical inspection of solder joints.