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Product Detailed Parameters
- Description：MOSFET N-CH 100V 1.4A/3.7A 6DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：1.4A (Ta), 3.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：385mOhm @ 1.5, 10V
- Vgs(th) (Max) @ Id：2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：195 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 15W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DFN2020MD-6
- Package / Case：6-UDFN Exposed Pad
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Overview
The Nexperia BUK6D385-100EX is an N-channel enhancement mode Trench MOSFET housed in a DFN2020MD-6 (SOT1220) package. It features a drain-source voltage of 100 V and a continuous drain current of 3.7 A at 25 °C. The device exhibits a maximum on-state resistance of 385 mΩ at VGS = 10 V and supports junction temperatures up to 175 °C. Total power dissipation reaches 15 W under specified conditions, with thermal resistance from junction to ambient at 74 K/W.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- Trench MOSFET technology for optimized performance
- Side wettable flanks enable optical solder inspection
- ESD protection exceeding 2 kV HBM
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switching
- General switching applications
Procurement Notes
Verify the specific ordering suffix 'EX' against official Nexperia documentation to confirm reel packaging specifications. Ensure the component matches the DFN2020MD-6 leadless package outline. Confirm that the marking code '4U' aligns with the intended production batch requirements for your assembly process.
Selection Notes
Select this component when a 100 V rating is required alongside low on-state resistance in a compact footprint. The extended temperature range up to 175 °C suits high-thermal environments. Verify gate drive compatibility given the threshold voltage characteristics and total gate charge values for efficient switching control.
Part Context
This part belongs to Nexperia's medium-power Trench MOSFET series designed for surface-mount applications. The DFN2020MD-6 package provides thermal enhancement through side wettable flanks. It serves as a robust solution for automotive and industrial systems requiring reliable switching capabilities within constrained board space.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinout configurations and thermal resistance values carefully. Ensure any alternative maintains the same voltage and current ratings to guarantee circuit integrity without redesigning the layout.
