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Product Detailed Parameters
- Description：NEXPERIA BUK6E4R0-75C - 120A, 75
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：234 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：15450 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：306W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
Nexperia BUK6E4R0-75C is an N-channel TrenchMOS FET designed for high-performance automotive applications. It features a 75 V drain-source voltage rating and supports up to 120 A continuous drain current at 25 °C mounting base temperature. The device operates with junction temperatures up to 175 °C and offers a typical on-state resistance of 4.2 mΩ at 25 °C. Packaged in the SOT226 (I2PAK) plastic single-ended format, it complies with the AEC-Q101 standard.
Feature Summary
- Compliant with AEC-Q101 standards for automotive reliability
- Supports intermediate level gate drive sources
- Rated for thermally demanding environments up to 175 °C
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package type and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 qualification status for your target application. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values under expected operating conditions.
Selection Notes
Select this component for circuits requiring robust N-channel switching with intermediate gate drive compatibility. The low on-state resistance minimizes conduction losses in high-current paths. Verify that the 75 V breakdown voltage aligns with system transients. Consider the SOT226 package dimensions for PCB layout constraints and ensure adequate heat sinking for sustained high-current operation.
Part Context
The BUK6E4R0-75C belongs to Nexperia's portfolio of N-channel TrenchMOS logic level FETs. These devices utilize advanced trench technology to deliver low on-resistance and high switching performance. Designed specifically for the automotive sector, they provide reliable power switching solutions for critical vehicle subsystems requiring high durability and thermal stability.
Replacement Considerations
Consult official Nexperia substitution guides or distributor cross-reference tools for verified equivalent part numbers. Ensure any replacement matches the SOT226 package outline, pin configuration, and electrical ratings. Verify that alternative components also meet AEC-Q101 requirements if automotive qualification is mandatory.
