BUK6Y10-30PX

$1.14

Description：MOSFET P-CH 30V 80A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:552bd448cad4 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 80A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2360 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：110W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK6Y10-30PX

Overview

The BUK6Y10-30PX is a P-channel enhancement mode MOSFET utilizing Trench MOSFET technology, housed in an LFPAK56 (Power-SO8) SMD plastic package. It features a drain-source voltage of -30 V and a continuous drain current of -80 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 8 mΩ at VGS = -10 V and supports junction temperatures up to 175 °C. Total power dissipation reaches 110 W under specified conditions.

Feature Summary

AEC-Q101 qualified for high-performance automotive applications
High thermal power dissipation capability with 175 °C rating
Trench MOSFET technology for optimized performance

Applications

Reverse battery protection
Power management
High-side load switch
Motor drive

Procurement Notes

Verify the specific suffix 'X' against official Nexperia documentation to confirm reel packaging specifications or tape-and-reel dimensions. Ensure the ordered part number matches the exact marking code '6Y1030P' and package type SOT669. Confirm AEC-Q101 compliance requirements align with target automotive application standards before finalizing procurement.

Selection Notes

Select this component for designs requiring robust reverse battery protection or high-side switching in automotive environments. The LFPAK56 package offers efficient thermal transfer suitable for thermally demanding scenarios. Verify gate drive voltage levels, as the device requires -10 V or -20 V for optimal RDSon performance. Consider the 175 °C junction temperature rating for high-temperature operation constraints.

Part Context

This device belongs to Nexperia's P-channel Trench MOSFET portfolio, specifically designed for automotive reliability. It complements N-channel counterparts like the BUK6D series by providing complementary switching capabilities in half-bridge or high-side configurations. The LFPAK56 package is standard for medium-power automotive discrete semiconductors requiring high current handling.

Replacement Considerations

Direct substitutes within the same family include BUK6Y19-30P (P-channel, similar voltage/current class). Cross-family replacements require matching RDSon, package footprint (SOT669), and AEC-Q101 qualification status. Verify pinout compatibility and thermal resistance characteristics when evaluating alternative manufacturers.