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Product Detailed Parameters
- Description：NEXPERIA BUK7107 - N-CHANNEL TRE
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：116 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4500 pF @ 25 V
- FET Feature：Current Sensing
- Power Dissipation (Max)：272W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
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Overview
The BUK7107-55AIE,118 is an N-channel enhancement mode MOSFET manufactured by Nexperia USA Inc. It features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 75 A at case temperature. The device has a maximum power dissipation of 272 W at case temperature and operates within a junction temperature range of -55°C to 175°C. Key electrical parameters include a gate charge (Qg) of 116 nC at 10 V, input capacitance (Ciss) of 4500 pF at 25 V, and a threshold voltage (Vgs(th)) of 4 V at 1 mA. The on-resistance (Rds(on)) is 7 mΩ at 50 A and 10 V. It is housed in a D2PAK package with five leads.
Feature Summary
- N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology for low conduction losses.
- Integrated temperature sensing diode enables responsive thermal monitoring.
- Qualified for automotive critical applications under the AEC-Q101 standard.
- Designed for high-current switching with robust electrostatic discharge protection.
Applications
- Automotive systems
- General purpose power switching
- Motor control
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm pinout and packaging details. Confirm component availability status as distribution data may indicate end-of-life or discontinuation. Ensure the selected variant matches the required thermal and electrical specifications for the target application environment.
Selection Notes
Select this component for designs requiring high current handling in a compact surface-mount package. Evaluate the thermal resistance characteristics to ensure adequate heat sinking for the intended power dissipation levels. Verify that the gate drive voltage aligns with the specified parameters for optimal on-resistance performance.
Part Context
This part belongs to the Nexperia BUK7 series of N-channel power MOSFETs. These devices are engineered for efficiency and reliability in power management applications. The series utilizes advanced trench technology to minimize on-state resistance while maintaining high breakdown voltage capabilities suitable for automotive and industrial environments.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference key parameters such as voltage rating, current capacity, and package dimensions when evaluating potential substitute components.
