ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：PFET, 75A I(D), 75V, 0.009OHM, 1
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The BUK7109-75AIE,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features an integrated current sensor and ESD protection diodes within a D2PAK (SOT426) plastic package. Key electrical parameters include a drain-source voltage of 75 V, a continuous drain current of 120 A at 25 °C mounting base temperature, and a typical on-state resistance of 89 mΩ at 25 °C. The device supports junction temperatures up to 175 °C and includes Kelvin source and sense current pins for precise monitoring.
Feature Summary
- Integrated current sensing capability with defined drain-to-sense current ratio
- Electrostatic discharge robustness via built-in protection diodes
- Automotive qualification compliant with AEC-Q101 standards
- Low conduction losses enabled by optimized on-state resistance
Applications
- Electrical Power Assisted Steering (EPAS)
- Variable Valve Timing systems for engines
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when high-current switching with integrated feedback is required. The inclusion of a dedicated sense pin allows for direct current monitoring without external shunt resistors, reducing bill of materials complexity. Ensure gate drive sources match the standard level threshold requirements specified in the datasheet characteristics.
Part Context
This part belongs to the Nexperia BUK7 series of N-channel TrenchPLUS MOSFETs designed for automotive critical applications. The series combines low on-resistance with advanced packaging technologies to handle thermally demanding environments. The BUK7109 variant specifically targets high-current applications requiring precise current control through its integrated sensing architecture.
Replacement Considerations
Direct substitutes must match the 75 V rating, 120 A current capacity, and D2PAK SOT426 package. Verify that any replacement also includes integrated current sensing and ESD protection diodes to maintain circuit functionality without redesign.
