SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BUK714R1-40BT,118 is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Nexperia's High-Performance Automotive TrenchMOS technology. It features a 40 V drain-source voltage rating and supports a continuous drain current of 75 A at case temperature. The device operates within a junction temperature range of -55°C to 175°C and dissipates up to 272 W. Key electrical parameters include a maximum on-state resistance of 4.1 mΩ at 10 V gate drive and a maximum gate charge of 83 nC. It is housed in a D2PAK package and complies with AEC-Q101 standards for automotive applications.
This component has reached End-of-Life status as per Product Change Notification dated December 30, 2015. Verification of availability should focus on surplus or obsolete channels rather than standard distribution. Confirm the specific revision level and packaging details against legacy inventory records before procurement planning.
Select this part for automotive circuits requiring robust thermal performance and integrated sensing capabilities. The inclusion of a temperature-sense diode allows for real-time junction temperature monitoring. Ensure the design accommodates the D2PAK footprint and utilizes appropriate heatsinking to manage the high power dissipation characteristics effectively.
This device belongs to the BUK714 series of N-channel TrenchPLUS standard level FETs. It is designed using Nexperia's High-Performance Automotive technology and is qualified to AEC-Q101 standards. The series targets critical automotive applications where reliability and thermal management are paramount.
Public confirmed substitute part numbers are not available in the provided documentation.