BUK7207-30B,118

$0.55

Description：MOSFET N-CH 30V 75A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cc479ec0e83d Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 75A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2245 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：167W (Tc)
Operating Temperature：-55°C ~ 185°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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BUK7207-30B,118

Overview

The Nexperia BUK7207-30B,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a SOT428 (DPAK) plastic package. Designed for automotive critical applications with AEC-Q101 compliance, it supports junction temperatures up to 185 °C. Key electrical parameters include a drain-source voltage of 30 V, continuous drain current of 75 A at 25 °C, and a typical on-state resistance of 5.97 mΩ at VGS=10V and ID=25A.

Feature Summary

Compliant with AEC-Q101 standards for automotive reliability
Optimized for low conduction losses through minimal on-state resistance
Compatible with standard level gate drive sources
Engineered for thermally demanding environments with an 185 °C rating

Applications

12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel configuration. Confirm that the component status remains active as product lifecycles may change. Ensure the selected package variant aligns with the PCB footprint requirements for the SOT428 outline. Cross-reference the latest datasheet revision to confirm any updates to thermal or electrical characteristics before finalizing the bill of materials.

Selection Notes

Select this component when designing circuits requiring high current handling capabilities within a compact surface-mount form factor. The low on-state resistance makes it suitable for efficient power management where minimizing heat generation is critical. Verify that the gate drive voltage meets the standard level requirements to ensure optimal performance and avoid excessive switching losses during operation.

Part Context

This device belongs to the Nexperia BUK7 series of N-channel TrenchMOS FETs. It shares the same package style and general application scope as other members like the BUK7Y20-30B and BUK763R4-30B. The primary differentiator is the specific on-resistance value, which dictates the maximum current handling capability relative to thermal constraints in the DPAK package.

Replacement Considerations

Direct substitutes include BUK7Y20-30B and BUK763R4-30B. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement part meets the same AEC-Q101 qualification standards required for the target automotive application.