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Product Detailed Parameters
- Description：MOSFET N-CH 75V 45A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：26mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2385 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：158W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK7226-75A,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing Nexperia General Purpose Automotive TrenchMOS technology. It features a DPAK (SOT428) plastic package with a mounting base connected to the drain. Key electrical parameters include a drain-source voltage of 75 V and a continuous drain current capped at 45 A due to bondwire limitations. The device exhibits a maximum on-state resistance of 26 mΩ at 25 °C and supports a junction temperature up to 175 °C. It includes non-repetitive avalanche energy ratings of 215 mJ.
Feature Summary
- Qualified for automotive critical applications in compliance with AEC-Q101 standards.
- Rated for operation at junction temperatures up to 175 °C.
- Features low on-state resistance suitable for efficient power switching.
- Compatible with standard level gate drive sources.
Applications
- 12 V, 24 V and 42 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring robust N-channel switching with high thermal tolerance. Ensure the gate drive circuitry aligns with standard level requirements. Consider the 45 A current cap imposed by internal bondwires when sizing for peak loads. Verify that the application environment remains within the specified -55 °C to 175 °C junction temperature range for reliable operation.
Part Context
This part belongs to the BUK7226 series of N-channel TrenchMOS FETs designed for general-purpose automotive use. It utilizes GPA TrenchMOS technology to provide enhanced ruggedness and thermal performance compared to standard MOSFETs. The SOT428 package offers a compact solution for surface-mount assembly while providing a dedicated thermal path through the mounting base.
Replacement Considerations
Consult official Nexperia documentation for verified cross-reference part numbers. Do not substitute based solely on pinout compatibility; verify electrical parameters and package dimensions against the original datasheet specifications.
FAQ
What limits the continuous drain current of the BUK7226-75A?
The continuous drain current is capped at 45 A due to the limitations of the internal bondwires within the package.
Is the BUK7226-75A suitable for repetitive avalanche operations?
Yes, the device is rated for avalanche energy. Single-pulse ratings are limited by a maximum junction temperature of 175 °C, while repetitive avalanche ratings are limited by an average junction temperature of 170 °C.
