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Product Detailed Parameters
- Description：MOSFET N-CH 55V 18A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：77mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：422 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：51W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK7277-55A is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a DPAK (SOT428) plastic package. It features a drain-source voltage of 55 V, continuous drain current of 18 A at 25 °C mounting base temperature, and total power dissipation of 51 W. The device exhibits low on-state resistance, with typical values of 65 mΩ at 25 °C and 154 mΩ at 175 °C junction temperature under 10 V gate drive. It supports non-repetitive avalanche energy of 36 mJ and operates within a junction temperature range of -55 °C to 175 °C.
Feature Summary
- AEC-Q101 compliant for automotive critical applications
- Low conduction losses due to low on-state resistance
- Suitable for standard level gate drive sources
- Operates in thermally demanding environments with a 175 °C rating
Applications
- 12 V and 24 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring robust N-channel switching with standard gate drive compatibility. Ensure thermal management accounts for the 2.9 K/W junction-to-mounting-base thermal resistance. Verify that peak currents do not exceed the 73 A limit and that avalanche energy requirements remain within the 36 mJ specification for unclamped inductive switching scenarios.
Part Context
This device belongs to Nexperia's TrenchMOS family, designed for high-performance power switching. The DPAK package provides a balance of thermal performance and space efficiency. As an automotive-qualified part, it meets rigorous reliability standards required for critical vehicle systems while maintaining cost-effectiveness for general industrial power control applications.
Replacement Considerations
Direct replacements must match the 55 V/18 A rating, SOT428 package, and AEC-Q101 qualification. Verify pinout compatibility (Gate-Drain-Source) and ensure equivalent or lower RDS(on) characteristics are maintained for thermal performance equivalence.
