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Product Detailed Parameters
- Description：PFET, 75A I(D), 75V, 0.009OHM, 1
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The BUK7509-75A is an N-channel enhancement mode power transistor utilizing TrenchMOS technology, housed in a SOT78 (TO-220AB) plastic package. It features a drain-source voltage of 75 V and a continuous drain current of 75 A at 25 °C. The device supports a total power dissipation of 230 W and operates with junction temperatures up to 175 °C. Its on-state resistance is specified as 9 mΩ max at 25 °C and 18.9 mΩ max at 175 °C. The component is compliant with the Q101 automotive standard.
Feature Summary
- Utilizes TrenchMOS technology for low on-state resistance
- Compliant with Q101 automotive standards
- Rated for operation up to 175 °C junction temperature
- Compatible with standard level gate drive sources
Applications
- Automotive and general purpose power switching
- 12 V, 24 V and 42 V loads
- Motors, lamps and solenoids
Procurement Notes
Verify the specific package configuration, as the datasheet lists the BUK7609-75A variant in the SOT404 (D2-PAK) package. Confirm that the ordering suffix matches the required physical footprint for your design. Ensure compatibility with standard level gate drivers before finalizing procurement. Cross-reference the manufacturer's latest documentation to confirm current production status and any potential obsolescence notices.
Selection Notes
Select this component for applications requiring high current handling in automotive or industrial environments. The standard level gate drive compatibility simplifies driver circuit design. Consider the thermal management requirements due to the high power dissipation capability. Verify that the 75 V rating provides sufficient margin for the specific system voltage levels and transient conditions encountered in the target application.
Part Context
This part belongs to the Nexperia TrenchMOS family of N-channel enhancement mode field-effect transistors. It shares specifications with the BUK7609-75A, which differs only in its surface-mount D2-PAK packaging. The series is designed for robust performance in thermally demanding environments, leveraging advanced trench gate technology to minimize conduction losses while maintaining high reliability standards.
Replacement Considerations
The BUK7609-75A is a direct functional equivalent available in the SOT404 (D2-PAK) package. Substitution requires verifying the mechanical footprint compatibility between TO-220AB and D2-PAK packages. No electrical parameter changes are expected between these variants.
